Wafers are the basic raw material for making semiconductor devices. These high-purity silicon chips are shaped through a series of manufacturing processes to form a very small circuit structure and then cut, packaged and tested.

In order to increase the density of semiconductor packages, the thickness of the chips is thinned. This process is known as back grinding.


The need for precision and accuracy has increased with the rise of advanced electrical devices, and there is a large demand for products that have tight tolerances. Precision grinding enables manufacturers to accommodate these specifications and produce high-quality components.

A wide variety of thinning methods can be used to thin wafers, including mechanical grinding, dry plasma etching, wet plasma etching, traditional loose-abrasive polishing, and chemical mechanical planarization (CMP). Each method has its own advantages and disadvantages, but the majority of them are effective and offer high thinning rates.

Mechanical Grinding - This is the most common approach and involves a diamond and resin bonded grind wheel mounted on a spindle. It is a low-cost and fast method of reducing the thickness of wafers and has good surface finish capabilities.

During this process, the grinding wheel is progressively ground to finer grits in a series of steps. Each step removes subsurface damage and reduces surface roughness to a point where the final finish on the wafer is achieved through conventional fine grinding, usually with 1200 to 2000 grit sand & poligrind wheels or even finer.

Dicing before Backgrinding - This process is a convenient complete solution for thin wafers that need to be processed both on the front and back sides. It ensures zero wafer breakage, a good flatness and high yield.

Dicing before Backgrinding has been a key process to meet the demands of ultra-compact packaging and handling of thin die. The process also guarantees a higher yield and ensures zero edge chipping, which can be a major issue with other processes.


During the semiconductor production process, wafers are ground to the right thickness prior to assembly. This is called wafer thinning and it is essential for making electronic devices smaller and more compact by allowing more components to fit in the device.

The cleanliness of a wafer is a key factor in determining its quality. It can be the difference between a successful and a failed product.

Cleanliness is a word that has a number of meanings, but it is usually associated with a sterile environment or a clean, organized space. It also refers to a particular way of cleaning and maintaining an area or object.

In the semiconductor industry, cleanliness is a necessity because wafers are small and delicate pieces of equipment that need to be protected from dust, debris, and other contaminants that could damage them during manufacturing. The cleanliness of a wafer is influenced by several factors, including its material type and its manufacturing method.

During wafer grinding, the surface of the wafer is polished with a variety of tools to remove any traces of material and make the surface smoother. Standard finishes include 1200 grit, 2000 grit, and poligrind. Each of these finishes leaves grind marks, but the higher grit levels improve roughness and remove most subsurface damage.

Regardless of which method is used for wafer grinding, a reliable test method is needed to ensure the proper sanitation of the equipment. A reliable method must consider all aspects of the production plant and equipment, including raw materials, personal hygiene, and maintenance. It must also be able to identify any remaining spoilage and pathogenic microorganisms.


Wafer backgrinding is the reduction of a semiconductor wafer’s thickness to create stacked and high-density packaging for integrated circuits (ICs). Conventional silicon wafers are generally 750 mm thick to ensure mechanical stability, but they’re often thinned down to 75 or 50 mm due to the increasing demand for thin, light, and compact devices.

Thinner semiconductors are necessary for modern electronic innovations that are becoming increasingly portable and lightweight, including handheld music players and smartphones. In addition to their reduced size, thinner devices also require less space for circuitry and components.

As the need for wafer thinning continues to grow, so does the need for improved process control and accuracy. This is especially true for chuck table dressing and wafer TTV, which are two important front-end processes.

The chuck table is a surface that is used to hold a wafer during the grinding process. It is typically made from a porous ceramic that provides an adsorption zone for the wafer to adhere to during the grinding process.

During the grinding process, deionized water is used to provide cooling and wash away particles from the wafer. This is done with a specialized vacuum chuck that has a rotating vacuum head with the backside of the wafer facing upwards toward the grind wheel.

This is an effective way to reduce wafer thickness without damaging the substrate, since it only removes material from the subsurface rather than directly destroying the wafer surface. The surface is then ground with a fine grit to eliminate the remaining subsurface damage and increase its smoothness.

Currently, there is little understanding of how the total thickness variation (TTV) shape is formed under various adjustment angles for grinding tools. The aim of this study is to develop a quantitative analysis theory model and an adjustment strategy for TTV control.

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Wafer thinning is a critical step for the fabrication of silicon integrated circuits (ICs). The process reduces the thickness of a wafer in order to allow stacking and high-density packaging. The most commonly used method for wafer thinning is conventional mechanical grinding, which uses a diamond and resin-bonded grind wheel mounted on a spindle to remove material.

A variety of grinding wheels are available, with different grits for varying material removal rates. The grits are progressively finer to reduce surface roughness and the depth of scratches caused by the grinding wheel.

The grit size is also a factor in the amount of vertical pressure applied during the grinding process. A coarser grit causes larger and deeper scratches that can be detrimental to the strength of the silicon die.

Dice before grind also eliminates the possibility of backside etching, which can occur when a layer of copper or solder is exposed to a wet etch solution during the final polishing step. This process can be particularly useful for thin film transistors, which often have a copper/solder layer that must be protected during polishing.

Other processes that can be used to minimize the thickness of a wafer include surface planarization, which can be done prior to the grinding process to reduce total wafer thickness variation. This technique also can be done after the grinding process to improve the appearance of the wafer’s final surface by smoothing out bump height variations.

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